Enhancement-Mode N-Channel MOSFET Id - Vgs Characteristics

** Circuit Description **
* bias conditions
Vds 1 0 DC +5V
Vgs 2 0 DC +3V      ; this value is arbitrary, we are going to sweep it
* MOSFET under test
M1 1 2 0 0 nmos_enhancement_mosfet L=10u W=400u
* mosfet model statement (by default, level 1)
.model nmos_enhancement_mosfet nmos (kp=20u Vto=+2 lambda=0)
** Analysis Requests **
.DC Vgs 0V 10V 100mV
** Output Requests **
.Plot DC I(Vgs) V(2)
.Probe
.end